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Product Detailed Parameters
- Description：IGBT 1000V 50A TO-247AD
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1000 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：4V @ 15V, 25A
- Power - Max：200 W
- Switching Energy：5mJ (off)
- Input Type：Standard
- Gate Charge：130 nC
- Td (on/off) @ 25°C：100ns/500ns
- Test Condition：800V, 25A, 33Ohm, 15V
- Reverse Recovery Time (trr)：50 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXGH25N100AU1 is a high-speed Insulated Gate Bipolar Transistor (IGBT) with an integrated anti-parallel Fast Recovery Epitaxial Diode (FRED). It utilizes the second-generation HDMOSTM process to achieve low collector-emitter saturation voltage for minimized on-state conduction losses. The device operates within a -55°C to +150°C junction temperature range and features a standard JEDEC TO-247AD package.
Feature Summary
- Combines IGBT and anti-parallel FRED in a single package
- Utilizes second-generation HDMOSTM process technology
- Features soft recovery characteristics with low reverse recovery current
- Includes isolated mounting screw hole for easy installation
Applications
- AC motor speed control
- DC servo and robot drives
- Uninterruptible power supplies (UPS)
- Switch-mode and resonant-mode power supplies
Procurement Notes
Verify component authenticity through authorized channels, as this part number is listed as obsolete or not recommended for new designs by the manufacturer. Confirm specific suffix variations against official datasheets to ensure functional equivalence, noting that packaging quantities may vary by distributor lot.
Selection Notes
Select this component for applications requiring high switching speeds and low conduction losses in medium-power circuits. The integrated diode simplifies circuit topology by eliminating the need for external freewheeling components. Ensure thermal management strategies account for the specific thermal resistance values provided in the technical documentation.
Part Context
This device belongs to the IXGH25N100 series of high-speed IGBTs manufactured by IXYS. It is designed for robust performance in demanding power electronics environments. The integration of the FRED diode allows for compact design solutions in inverters and choppers where space efficiency and assembly cost reduction are critical priorities.
Replacement Considerations
Check for direct substitutes within the IXGH25N100 family, such as the IXGH25N100A, while verifying pinout compatibility and electrical parameter alignment. Since the original part is obsolete, evaluate alternative manufacturers offering comparable voltage ratings and package types.
