IXGH30N120B3D1

Overview

The IXGH30N120B3D1 is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the GenX3 series, manufactured by IXYS. It utilizes TO-247AD-3 through-hole packaging with a flange mount configuration. The device supports a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 30 A at 25°C, with a peak pulsed current rating of 150 A. Key electrical parameters include a saturated collector-emitter voltage of 3.5 V and a power dissipation capacity of 300 W. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• GenX3 technology designed for low conduction losses and optimized switching performance
• High short-circuit capability suitable for robust industrial applications
• Integrated fast recovery anti-parallel diode for inductive load commutation

Applications

• Motor drive inverters
• Switched-mode power supplies
• Induction heating systems

Procurement Notes

Verify the specific ordering suffix against official IXYS documentation to confirm package type and internal die specifications. Ensure compliance with RoHS directives as indicated in the manufacturer's datasheet. Confirm that the TO-247AD-3 lead form matches the target PCB footprint requirements before finalizing procurement orders.

Selection Notes

Select this component when a 1200V blocking voltage and 30A continuous current rating are required in a standard through-hole package. Compare the 3.5 V saturation voltage against alternative devices to evaluate thermal management needs. Consider the 300 W power dissipation limit relative to the available heatsinking area and ambient operating conditions.

Part Context

This part belongs to the IXYS IXGH30N120 family of high-voltage IGBTs. It shares the same electrical ratings as the IXGT30N120B3D1 but differs in physical packaging, utilizing the TO-247AD-3 form factor instead of surface-mount options. The GenX3 branding indicates the use of IXYS's third-generation trench gate technology.

Replacement Considerations

The IXGT30N120B3D1 serves as a direct functional substitute with identical electrical characteristics, differing only in the SMD D3PAK-3 package. Designers requiring a through-hole solution must verify mechanical compatibility when swapping between these two specific part numbers.