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The IXGH30N60C2D4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 600V and a continuous collector current rating of 60A. The device utilizes the GenX3 technology platform and is housed in a TO-247AD package with three terminals. It supports through-hole mounting and operates within a junction temperature range of -55°C to +150°C.
Verify component authenticity against official IXYS documentation due to potential supply chain variations. Confirm that the specific suffix D4 aligns with required electrical tolerances and packaging specifications. Ensure compatibility with existing thermal interface materials and mounting hardware before integration into final assemblies.
Select this component when a 600V blocking capability and 60A continuous current handling are required in a standard TO-247AD form factor. Consider the GenX3 technology benefits for applications demanding efficient switching characteristics. Validate that the single-chip configuration meets the circuit topology requirements without needing parallel devices.
This part belongs to the IXGH series of high-power IGBTs from IXYS, designed for medium-to-high power conversion applications. The GenX3 technology represents an evolution in trench-gate field-stop structures, offering improved trade-offs between conduction losses and switching speeds compared to earlier generations.
Direct substitutes include the IXSH30N60C, which shares similar voltage and current ratings but may differ in specific switching parameters. Verify pinout compatibility and thermal resistance values when considering alternative models from other manufacturers.