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Product Detailed Parameters
- Description：IGBT PT 1200V 75A TO-247AD
- Series：GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：230 A
- Vce(on) (Max) @ Vge, Ic：2.35V @ 15V, 32A
- Power - Max：300 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：89 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXGH32N120A3 is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes GenX3 technology and is housed in a TO-247AD-3 through-hole package. The device features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 75 A at 25°C. Its collector-emitter saturation voltage is specified at 2.35 V, with a power dissipation rating of 300 W. The component operates within a temperature range of -55°C to +150°C and supports a maximum gate-emitter voltage of ±20 V.
Feature Summary
- GenX3 technology implementation for optimized switching performance
- High voltage blocking capability suitable for industrial power applications
- Robust thermal management design in a standard through-hole package
Applications
- Industrial motor drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify the specific manufacturing date code and lot traceability upon receipt to ensure compliance with project reliability standards. Confirm that the TO-247AD-3 package pins are free from damage or oxidation before soldering. Review the official datasheet for detailed handling precautions regarding electrostatic discharge sensitivity during storage and assembly processes.
Selection Notes
Select this component when a 1.2 kV blocking voltage and 75 A continuous current capacity are required in a TO-247AD-3 form factor. Compare the 2.35 V saturation voltage against alternative devices to evaluate conduction losses in the target circuit design. Ensure the thermal resistance characteristics align with the available heatsinking infrastructure for the intended operating environment.
Part Context
This part belongs to the IXGH32N120 series of IGBTs from IXYS. It shares the same voltage and current ratings as other members of the family but may differ in saturation voltage or switching speed depending on the specific suffix designation. The TO-247AD-3 package provides a standardized footprint for mounting on printed circuit boards using through-hole technology.
Replacement Considerations
Direct pin-to-pin replacements must match the 1.2 kV / 75 A specifications and TO-247AD-3 package. Verify equivalent saturation voltage and thermal resistance values to maintain circuit efficiency. Cross-reference with other IXYS GenX3 series parts for potential upgrades in switching performance.
