IXGH36N60B3C1

Overview

The IXGH36N60B3C1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the GenX3 series, manufactured by IXYS. It utilizes silicon technology and is housed in a TO-247AD-3 through-hole package. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 36 A at 25°C. Its collector-emitter saturation voltage is specified at 1.8 V. The component supports a power dissipation of 250 W and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• GenX3 technology for optimized switching performance
• Low saturation voltage for reduced conduction losses
• Robust thermal handling capabilities

Applications

• Motor drives
• Switched-mode power supplies
• Inverters

Procurement Notes

Verify the specific suffix C1 against official datasheets to confirm any distinct marking or testing variations compared to the standard B3 variant. Ensure the source document explicitly lists the full part number IXGH36N60B3C1 to avoid confusion with similar models in the same family.

Selection Notes

Select this component for applications requiring a balance of low conduction loss and moderate switching speeds around 5-40 kHz. The TO-247AD-3 package facilitates efficient heat sinking for medium-power designs. Confirm that the 600V rating aligns with the system's peak voltage requirements.

Part Context

This IGBT belongs to the IXGH36N60 family, which includes variants like IXGH36N60B3. The GenX3 series is designed for general-purpose industrial applications. The C1 suffix typically denotes a specific manufacturing lot or testing configuration rather than a fundamental electrical change, though verification is required.

Replacement Considerations

Direct substitutes include IXGH36N60B3 and IXGH36N60A3D4. When replacing, verify pinout compatibility and ensure the alternative device meets the 600V and 36A specifications.