IXGH40N60A

Description：IGBT 600V 75A TO-247AD
Series：-

SKU:04b522498b6b Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 75A TO-247AD
Series：-
Mfr：IXYS
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：75 A
Current - Collector Pulsed (Icm)：150 A
Vce(on) (Max) @ Vge, Ic：3V @ 15V, 40A
Power - Max：250 W
Switching Energy：3mJ (off)
Input Type：Standard
Gate Charge：200 nC
Td (on/off) @ 25°C：100ns/600ns
Test Condition：480V, 40A, 22Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AD
Grade：-
Qualification：-

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IXGH40N60A

Overview

The IXYS IXGH40N60A is a high-speed Insulated Gate Bipolar Transistor (IGBT) utilizing the 2nd generation HDMOS process. It features a 600 V collector-emitter breakdown voltage and a continuous collector current of 75 A at 25°C, with a maximum saturation voltage of 3.0 V at 15 V gate drive. The device operates within a junction temperature range of -55°C to +150°C and dissipates up to 250 W. Packaged in an isolated TO-247AD housing, it offers low on-state conduction losses and high current handling capability.

Feature Summary

High-speed switching performance optimized for resonant-mode power supplies
Low collector-emitter saturation voltage for reduced conduction losses
Voltage rating guaranteed at elevated temperatures up to 125°C
MOS gate turn-on architecture ensuring simple drive requirements

Applications

AC motor speed control systems
DC servo and robot drives
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode power supplies

Procurement Notes

Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm package integrity and pin alignment against the TO-247AD outline specifications. Ensure storage conditions prevent moisture ingress prior to soldering. Review datasheet test conditions carefully when validating electrical parameters for specific circuit designs.

Selection Notes

Select this component for applications requiring fast switching speeds combined with low conduction losses. The TO-247AD package facilitates easy mounting via a single isolated screw. Consider thermal management requirements based on the specified junction-to-case thermal resistance. Evaluate gate drive capabilities to ensure compatibility with the standard MOS gate input characteristics.

Part Context

This IGBT belongs to the IXYS HiPerFAST family, designed for efficient power conversion. The series utilizes advanced semiconductor processes to balance switching speed and conduction efficiency. It serves as a core switching element in industrial power electronics, providing reliable performance under high-voltage and high-current operating conditions.