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The IXYS IXGH40N60C2D1 is a single Insulated Gate Bipolar Transistor (IGBT) belonging to the HiPerFAST C2 series. It features a Planar Technology (PT) structure housed in an ISOPLUS247 through-hole package. The device supports a maximum collector-emitter breakdown voltage of 600V and a continuous collector current of 56A at 25°C, with a pulsed current rating of 200A. Key electrical parameters include a maximum saturation voltage of 2.7V at 30A and 15V gate drive, a gate charge of 95nC, and a maximum power dissipation of 170W. Switching characteristics under test conditions of 400V, 30A, and 3 Ohm include turn-on delay of 18ns and turn-off delay of 90ns.
Verify component authenticity through authorized IXYS distributors or certified agents. Confirm part status as obsolete or not recommended for new designs before procurement planning. Request original manufacturer datasheets and traceability documentation to ensure compliance with technical specifications and quality standards.
Select this component for circuits requiring 600V blocking capability and moderate current handling up to 56A. Ensure the gate driver can supply the required 15V swing and sufficient peak current to manage the 95nC gate charge within the desired switching frequency limits. Verify that the thermal design accommodates the 170W power dissipation rating under worst-case operating conditions.
This IGBT is part of the IXYS HiPerFAST family, designed for medium-power switching applications. It shares the ISOPLUS247 footprint with other devices in the series, allowing for potential pin-compatible design strategies within specific voltage and current constraints. The C2 generation focuses on balancing switching speed and conduction loss.
Publicly confirmed substitute part numbers are not available in the provided source material. Evaluate alternative components based on matching voltage ratings, current capacity, package type, and switching characteristics when sourcing replacements for this obsolete device.