IXGH48N60C3C1

Overview

The IXGH48N60C3C1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Silicon technology and features the XPT (eXtended Plate Technology) and GenX3 architecture for optimized performance. The device is housed in a TO-247AD-3 package designed for through-hole mounting. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 75 A at 25°C. The saturation voltage (VCEsat) is rated at 2.5 V, with a maximum power dissipation (Pd) of 300 W. The gate-emitter voltage range is -20 V to +20 V, and it operates within a temperature range of -55°C to +150°C.

Feature Summary

• Incorporates IXYS XPT technology to achieve low saturation voltage and improved switching characteristics.
• Utilizes GenX3 trench gate field-stop structure for enhanced ruggedness and reliability.
• Designed for high-power applications requiring robust short-circuit withstand capability.

Applications

• Motor drives and servo amplifiers
• Switched-mode power supplies (SMPS)
• High-frequency inverters

Procurement Notes

Verify the specific suffix 'C1' against official IXYS documentation, as standard listings often reference 'D1'. Confirm RoHS compliance status and REACH SVHC declarations directly from the manufacturer's datasheet or certified component database before procurement. Ensure the ordering part number matches the exact pinout and thermal characteristics required for the design.

Selection Notes

Select this component for designs requiring a 600V rating with 75A continuous current capacity in a TO-247AD package. Consider the 2.5V VCEsat for conduction loss calculations. Verify that the thermal management solution can handle 300W dissipation. Compare against similar models like IXGH48N60C3D1 if the 'C1' suffix availability is limited, ensuring functional equivalence.

Part Context

This IGBT belongs to the IXGH48N60 series, which represents IXYS' high-performance discrete IGBT lineup. The series is characterized by the integration of XPT and GenX3 technologies, targeting efficiency improvements in industrial power conversion. It serves as a key component in medium-to-high power electronic systems where reliable switching and low losses are critical.

Replacement Considerations

The IXGH48N60C3D1 is a closely related variant within the same series. Verify if the 'D1' suffix denotes a different packaging or tape-and-reel option rather than a functional change. Cross-reference with other IXYS 600V/75A IGBTs only if electrical parameters and pinouts match exactly.