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Product Detailed Parameters
- Description：IGBT NPT 1700V 12A TO-247AD
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：12:00 AM
- Current - Collector Pulsed (Icm)：24 A
- Vce(on) (Max) @ Vge, Ic：4V @ 15V, 6A
- Power - Max：75 W
- Switching Energy：1.5mJ (off)
- Input Type：Standard
- Gate Charge：20 nC
- Td (on/off) @ 25°C：40ns/250ns
- Test Condition：1360V, 6A, 33Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXYS IXGH6N170 is an N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage power switching applications. It features a maximum collector-emitter voltage (VCEO) of 1700 V and a continuous collector current (Ic) of 12 A at 25°C. The device exhibits a maximum collector-emitter saturation voltage (VceSAT) of 4 V, with a maximum gate-emitter voltage (VGEO) rating of ±20 V. Packaged in a TO-247AD through-hole housing, it supports a maximum power dissipation (Pd) of 75 W. The component operates within a temperature range from -55°C to +150°C.
Feature Summary
- High voltage capability rated at 1700 V for robust operation in demanding electrical environments
- Low saturation voltage characteristic to minimize conduction losses during switching cycles
- Through-hole mounting configuration providing mechanical stability for industrial assemblies
Applications
- Industrial motor drives and variable frequency drive systems
- High voltage DC-DC converter topologies
- Uninterruptible power supply (UPS) inverters
Procurement Notes
Verify the specific suffix and revision level against the manufacturer's latest datasheet before ordering. Confirm thermal management requirements align with the 75 W dissipation limit. Ensure sourcing channels provide original manufacturer documentation to validate authenticity and traceability.
Selection Notes
Select this component when a 1700 V blocking voltage is required alongside moderate current handling up to 12 A. Compare the 4 V saturation voltage against alternative devices to optimize efficiency in low-to-medium power switching circuits. Verify that the TO-247AD package fits the available PCB footprint and heatsinking constraints.
Part Context
This part belongs to the IXYS High Voltage IGBT series, specifically engineered for silicon-based power switching. It complements other models in the lineup by offering a balance between voltage rating and current capacity, suitable for applications requiring reliable performance under high electrical stress conditions.
Replacement Considerations
Direct substitutes include the IXGT6N170, which shares similar electrical ratings but utilizes a surface-mount D3PAK (TO-268-3) package instead of TO-247AD. Cross-compatibility requires verifying pinout alignment and thermal interface dimensions. Evaluate the IXGR6N170A as an alternative through-hole option, noting its higher saturation voltage of 7 V.
