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The IXGK120N60C2 is a single IGBT from the HiPerFAST™ series, manufactured by IXYS. It features a planar trench technology (PT) design with a collector-emitter breakdown voltage of 600V and a maximum continuous collector current of 75A. The device supports a pulsed collector current of 200A and has a maximum power dissipation of 830W. Key electrical parameters include a Vce(on) of 2.4V at 15V gate drive and 75A collector current, a gate charge of 190nC, and switching energies of 350µJ (turn-on) and 1000µJ (turn-off). It operates within a junction temperature range of -55°C to 150°C and utilizes the TO-264AA package for through-hole mounting.
Verify component authenticity due to obsolete status. Confirm package integrity upon receipt. Check datasheet for latest test conditions. Ensure storage environment meets semiconductor standards. Validate replacement compatibility if original stock is unavailable.
Choose this model for high-power applications requiring 600V blocking capability. Consider the 75A current rating for load requirements. Evaluate thermal resistance for heat sink design. Compare switching losses against system efficiency targets. Verify gate drive voltage compatibility with standard 15V levels.
This component belongs to IXYS's HiPerFAST™ family, designed for efficient power conversion. It complements other discrete semiconductors like MOSFETs and diodes in complete power stages. The TO-264AA package provides mechanical stability for industrial environments. It serves as a key switching element in medium to high-power electronic systems.
Public confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer archives or authorized distributors for direct replacements. Ensure pinout and thermal characteristics match when selecting alternatives.