IXGK50N120C3H1

Overview

The IXGK50N120C3H1 is a high-speed N-channel Insulated Gate Bipolar Transistor (IGBT) from the IXYS GenX3 series, designed for switching frequencies between 20 kHz and 50 kHz. It features an integrated anti-parallel ultra-fast diode within a TO-264AA package. Key electrical parameters include a maximum collector-emitter voltage of 1200 V and a continuous collector current of 75 A at 25°C. The device exhibits a maximum collector-emitter saturation voltage of 2.8 V and supports a power dissipation of 500 W. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Optimized for low switching losses in high-frequency applications
• Features a square Reverse Bias Safe Operating Area (RBSOA)
• Includes an integrated anti-parallel ultra-fast recovery diode
• Provides positive thermal coefficient for Vce(sat) ensuring safe parallel operation

Applications

• High frequency power inverters
• Uninterruptible Power Supplies (UPS)
• Motor drives
• Switching Mode Power Supplies (SMPS)

Procurement Notes

Verify the specific suffix 'H1' against official datasheets to confirm the presence of the integrated diode and exact pinout configuration. Ensure the ordering part number matches the required package type and thermal characteristics. Cross-reference with Littelfuse documentation as IXYS has been acquired, confirming active status and availability through authorized distributors.

Selection Notes

Select this component for designs requiring high voltage blocking capability combined with fast switching speeds up to 50 kHz. The integrated diode simplifies circuit topology for half-bridge configurations. Consider the TO-264AA package for through-hole mounting requirements and verify that the gate drive voltage limits are respected to maintain reliability under high current conditions.

Part Context

This IGBT belongs to the IXYS GenX3 family, which utilizes trench gate technology to reduce switching losses compared to previous generations. The XPT (Extra-Precision Technology) ensures robust avalanche ruggedness and improved short-circuit withstand capability. It serves as a discrete solution for medium-power industrial applications where efficiency and thermal stability are critical.

Replacement Considerations

Direct replacements may include the IXGK50N120A3 or IXGK50N120BU1, though these variants may lack the integrated diode found in the H1 suffix version. Verify pin compatibility and thermal resistance values when substituting. Consult manufacturer cross-reference guides for updated equivalents under the Littelfuse portfolio.