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Product Detailed Parameters
- Description：IGBT 2500V 110A ISOPLUSI5-PAK
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：2500 V
- Current - Collector (Ic) (Max)：110 A
- Current - Collector Pulsed (Icm)：580 A
- Vce(on) (Max) @ Vge, Ic：2.9V @ 15V, 75A
- Power - Max：430 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：410 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：ISOPLUSi5-PAK™
- Supplier Device Package：ISOPLUSi5-Pak™
- Grade：-
- Qualification：-
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Overview
The IXGL75N250 is a high-voltage silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a single N-channel configuration housed in a TO-247 package with through-hole mounting. The device supports a maximum collector-emitter voltage of 2500 V and a continuous collector current of 75 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 3.1 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 937 W. It operates within a temperature range of -55°C to +175°C junction temperature.
Feature Summary
- Designed specifically for capacitor discharge applications requiring high voltage handling.
- Utilizes standard TO-247 packaging for robust thermal management and mechanical stability.
- Provides high current capacity suitable for demanding pulsed power loads.
Applications
- Capacitor discharge circuits
- High voltage pulsed power systems
Procurement Notes
Verify the specific datasheet revision and manufacturer documentation before integration. Confirm that the TO-247 pinout matches the target PCB layout. Ensure thermal interface materials are rated for the specified junction temperature limits. Check for any RoHS compliance details in the official product specifications.
Selection Notes
Select this component when designing circuits that require 2500 V blocking capability and high peak current delivery. The TO-247 package is appropriate for applications where through-hole mounting and high thermal conductivity are prioritized. Evaluate the 3.1 V saturation voltage against system efficiency requirements during conduction phases.
Part Context
This IGBT belongs to the IXYS family of high-voltage semiconductor devices intended for industrial power conversion. It shares the 2500 V rating class with other models like the IXGH series but is optimized for specific discharge duties. The component represents a standard solution for medium-power high-voltage switching tasks.
Replacement Considerations
Consult the official IXYS datasheet for electrically equivalent alternatives such as the IXGH75N250 or IXGF75N250. Verify pin compatibility and thermal characteristics before substituting. Cross-referencing with similar high-voltage IGBTs from other manufacturers requires careful validation of saturation voltages and switching speeds.
