ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 600V 40A TO-204AE
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
- Power - Max：150 W
- Switching Energy：2mJ (on), 3.2mJ (off)
- Input Type：Standard
- Gate Charge：120 nC
- Td (on/off) @ 25°C：100ns/600ns
- Test Condition：480V, 20A, 82Ohm, 15V
- Reverse Recovery Time (trr)：200 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-204AE
- Supplier Device Package：TO-204AE
- Grade：-
- Qualification：-
Download product information
Overview
The IXGM20N60 is a 600V N-channel MOSFET from IXYS, designed for high-efficiency power switching applications. It features a low on-state resistance of 0.18 ohms typical at 25°C, enabling efficient current handling up to 20A continuous drain current. The device utilizes advanced trench gate technology to minimize switching losses and improve thermal performance. Key electrical parameters include a maximum gate-source voltage of ±20V and a total power dissipation of 230W when mounted on an infinite heatsink at 25°C case temperature.
Feature Summary
- Advanced trench gate technology for optimized switching performance
- Low on-state resistance for reduced conduction losses
- Enhanced thermal characteristics for reliable operation under high load conditions
Applications
- High-frequency DC-DC converters
- Motor control circuits
- Power factor correction (PFC) stages
Procurement Notes
Verify the specific ordering suffix against the official IXYS datasheet to ensure compatibility with required package type and marking codes. Confirm that the component meets all specified electrical limits for your application environment before procurement. Cross-reference the manufacturer's latest documentation to validate any changes in specifications or recommended operating conditions.
Selection Notes
Select this component based on its 600V breakdown voltage and 20A current rating suitability for medium-power switching tasks. Evaluate the thermal management requirements considering the 0.18 ohm Rds(on) and 230W power dissipation capabilities. Ensure the gate drive circuitry supports the ±20V gate-source voltage limit for safe operation.
Part Context
This part belongs to IXYS' family of high-voltage N-channel MOSFETs, leveraging trench gate architecture for improved efficiency compared to planar devices. It is engineered for robust performance in demanding power electronics environments where low loss and fast switching are critical.
Replacement Considerations
Consult official IXYS substitution guides for direct replacements. Verify pinout compatibility and electrical parameter equivalence, particularly Vds, Id, and Rds(on), before substituting.
