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Product Detailed Parameters
- Description：IGBT 1000V 50A TO-204AE
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1000 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：4V @ 15V, 25A
- Power - Max：200 W
- Switching Energy：5mJ (off)
- Input Type：Standard
- Gate Charge：180 nC
- Td (on/off) @ 25°C：100ns/500ns
- Test Condition：800V, 25A, 33Ohm, 15V
- Reverse Recovery Time (trr)：200 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-204AE
- Supplier Device Package：TO-204AE
- Grade：-
- Qualification：-
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Overview
The IXGM25N100A is a second-generation HDMOSTM process Insulated Gate Bipolar Transistor (IGBT) from IXYS. It features low collector-emitter saturation voltage for reduced on-state conduction losses and high current handling capability. The device utilizes a MOS gate structure to ensure drive simplicity. Voltage ratings are guaranteed at elevated temperatures up to 125°C. It is housed in an international standard TO-247 package, facilitating easy mounting with a single screw.
Feature Summary
- Second-generation HDMOSTM process technology
- Low VCE(sat) for low on-state conduction losses
- High current handling capability
- Voltage rating guaranteed at high temperature
Applications
- AC motor speed control
- DC servo and robot drives
- Uninterruptible power supplies (UPS)
- Switch-mode and resonant-mode power supplies
Procurement Notes
Verify the specific suffix 'A' against the manufacturer datasheet to confirm pinout or electrical parameter variations compared to the base model. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure thermal management solutions align with the TO-247 package constraints and maximum junction temperature limits specified in the official documentation.
Selection Notes
Select this component for applications requiring simplified gate drive circuits due to its MOS gate architecture. The guaranteed voltage rating at high temperatures makes it suitable for environments with significant thermal stress. Consider the TO-247 package for designs prioritizing ease of mechanical assembly and isolated mounting via a single screw hole.
Part Context
This IGBT belongs to the IXYS IXGM series, designed for high-efficiency power switching. The second-generation HDMOSTM process distinguishes it from earlier iterations by optimizing the trade-off between conduction and switching losses. It serves as a robust discrete solution for medium-power industrial and consumer electronics applications.
Replacement Considerations
The IXGM25N100 is a related variant within the same family. Verify if the non-suffixed version meets the specific design requirements before substitution.
