IXGN100N170

Overview

The IXGN100N170 is a high-voltage N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a collector-emitter voltage rating of 1700 V and a continuous collector current capacity of 100 A. The device utilizes XPT (Extended P-Base Trench) technology to optimize switching performance and conduction losses. It is housed in a TO-247AD package designed for through-hole mounting, supporting a maximum power dissipation of 937 W. The component operates within a temperature range from -55°C to +175°C, making it suitable for demanding industrial power applications requiring robust high-voltage switching capabilities.

Feature Summary

• Utilizes IXYS XPT trench technology for optimized trade-off between low saturation voltage and fast switching speed.
• Designed with a rugged TO-247AD package to facilitate efficient heat dissipation and reliable thermal management.
• Engineered for high-voltage operation up to 1700 V with enhanced short-circuit withstand capability.

Applications

• Industrial motor drives and variable frequency drives
• Uninterruptible power supply (UPS) systems
• High-frequency induction heating equipment

Procurement Notes

Verify the specific ordering suffix against the official IXYS datasheet to ensure correct pinout and electrical characteristics. Confirm RoHS compliance status and packaging type requirements prior to purchase. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability. Ensure that thermal interface materials and mounting hardware are compatible with the TO-247AD form factor for proper installation.

Selection Notes

Select this component when designing circuits requiring high blocking voltage and significant current handling in a single-die configuration. Consider the thermal resistance characteristics and gate charge parameters relative to the driving circuitry. Evaluate the application's duty cycle and peak current demands against the device's safe operating area. Ensure the system layout supports adequate heatsinking to maintain junction temperatures within specified limits during continuous operation.

Part Context

This IGBT belongs to IXYS' high-voltage discrete semiconductor portfolio, specifically targeting medium-to-high power conversion applications. It complements other devices in the series by offering a balance of conductivity and switching efficiency. The product line is widely recognized in industrial automation and renewable energy sectors for its reliability under harsh electrical conditions.

Replacement Considerations

Direct substitutes include the IXGH100N170 or IXBH100N170, provided pin compatibility and thermal specifications match the existing design. Verify that alternative parts meet the same 1700 V rating and 100 A current requirements. Check for any differences in gate threshold voltage or switching times that may necessitate driver circuit adjustments.