IXGN200N170

Overview

The IXGN200N170 is a high-voltage single IGBT manufactured by IXYS, designed for demanding power conversion applications. It features a collector-emitter breakdown voltage of 1700V and a maximum continuous collector current of 280A. The device delivers a power dissipation rating of 1250W and operates with a switching time of 320ns. Packaged in a SOT-227B chassis mount configuration, it supports robust thermal management for industrial environments.

Feature Summary

• High-power capability with 1700V blocking voltage and 280A current handling
• Optimized switching performance with 320ns transition time
• Chassis mount design for efficient heat dissipation

Applications

• Industrial motor drives
• High-frequency power supplies
• Uninterruptible power systems (UPS)

Procurement Notes

Verify the specific datasheet revision to confirm electrical characteristics match the target application requirements. Ensure the SOT-227B mounting interface aligns with the thermal solution design. Confirm that the 1700V rating provides adequate safety margins for the system's peak voltage conditions during operation.

Selection Notes

Select this component when high current capacity and fast switching are required in a single-chip solution. The 1250W power dissipation allows for effective thermal management in chassis-mounted configurations. Consider the 320ns switching speed for applications requiring reduced switching losses compared to slower alternatives.

Part Context

This part belongs to IXYS's portfolio of high-voltage discrete IGBTs. It complements other models like the IXBH42N170A and IXBA16N170AHV-TRL, offering higher current density suitable for medium-to-high power industrial converters where robustness and efficiency are critical.

Replacement Considerations

Public confirmed substitute part numbers: None available.