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The IXGN320N60A3 is a single N-channel Insulated Gate Bipolar Transistor manufactured by IXYS. It utilizes silicon technology and is housed in a SOT-227B-4 package designed for screw mount installation. The device supports a maximum collector-emitter voltage of 600 V and delivers a continuous collector current of 320 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.3 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation capacity of 735 W. It operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official IXYS documentation to ensure correct pinout and electrical characteristics. Confirm RoHS compliance status through the manufacturer's datasheet before integration. Check for any recent product discontinuance notifications or lifecycle changes directly from the supplier to avoid supply chain disruptions during production.
Select this component for applications requiring high current switching at 600 V levels. Ensure the thermal management system can handle 735 W dissipation. Verify that the drive circuit provides the required ±20 V gate-emitter voltage limits. Compare the 1.3 V saturation voltage against alternative devices to optimize efficiency for the specific load requirements.
This part belongs to the IXGN320N60 series of IGBT transistors. It shares the same voltage and current ratings as other members of the family but may differ in packaging or specific electrical tolerances. The SOT-227B-4 package distinguishes it from lower-power TO-247 variants found in the same manufacturer lineup.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer's cross-reference guide for verified alternatives.