IXGN40N60CD1

Overview

The IXGN40N60CD1 is a single Insulated Gate Bipolar Transistor (IGBT) from the IXYS HiPerFAST series. It features a 600V collector-emitter breakdown voltage and a continuous collector current of 40A at 25°C, with a pulsed current rating of 120A. The device exhibits a maximum saturation voltage of 2.3V at 15V gate drive and 30A collector current. Key switching parameters include a turn-on delay of 18ns and a turn-off delay of 90ns under standard test conditions. The component is housed in an ISOPLUS247 package for through-hole mounting, supporting a maximum power dissipation of 170W and operating junction temperatures up to 150°C.

Feature Summary

• High-voltage blocking capability suitable for industrial power conversion
• Low saturation voltage for improved conduction efficiency
• Electrically isolated base design for enhanced thermal management and EMI reduction

Applications

• Switched-mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Inductive heating systems

Procurement Notes

Verify part authenticity against manufacturer documentation due to obsolete status. Confirm package integrity and pin alignment before installation. Check for specific suffix variations that may indicate different testing or binning criteria. Ensure sourcing channels provide traceability records. Validate electrical parameters against original datasheets prior to integration into final assemblies.

Selection Notes

Select this component for applications requiring 600V isolation with moderate current handling. Compare switching energy losses against alternative IGBTs if high-frequency operation is required. Ensure the ISOPLUS247 footprint matches the PCB layout constraints. Verify gate drive requirements align with the standard input type specifications.

Part Context

This device belongs to the IXYS HiPerFAST family of medium-speed IGBTs designed for general-purpose power switching. It shares the ISOPLUS247 package architecture with other high-power discrete devices from the manufacturer. The part serves as a replacement for older generations of 600V transistors in industrial and consumer electronics power stages.

Replacement Considerations

Direct substitutes include IXGH40N60C and IXSH24N60BD1. Verify pin compatibility and thermal resistance values when cross-referencing with onsemi or STMicroelectronics equivalents.