IXGN60N60C2

IXGN60N60C2

  • Description:IGBT MOD 600V 75A 480W SOT227B
  • Series:HiPerFAST™

SKU:0d959839915f Category: Brand:

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Product Detailed Parameters

  • Description:IGBT MOD 600V 75A 480W SOT227B
  • Series:HiPerFAST™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:PT
  • Configuration:Single
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 50A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:SOT-227B
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):75 A
  • Power - Max:480 W
  • Current - Collector Cutoff (Max):650 µA
  • Input Capacitance (Cies) @ Vce:4.75 nF @ 25 V

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IXGN60N60C2

Overview

The IXGN60N60C2 is a HiPerFAST IGBT module manufactured by IXYS, featuring an integrated anti-parallel diode. It utilizes International Standard SOT-227B packaging with aluminum nitride isolation for high power dissipation and provides 3000 Vrms isolation voltage. The device incorporates a very high current, fast-switching IGBT with low VCE(sat) to minimize on-state conduction losses. Key electrical characteristics include low collector-to-case capacitance (less than 50 pF) and low package inductance (less than 5 nH), facilitating easy driving and protection.

Feature Summary

  • HiPerFAST technology with integrated anti-parallel diode
  • Aluminum nitride isolation for high thermal performance
  • Low saturation voltage for reduced conduction losses
  • International standard SOT-227B package design

Applications

  • AC motor speed control systems
  • DC servo and robot drives
  • Uninterruptible power supplies (UPS)
  • Switch-mode and resonant-mode power supplies

Procurement Notes

Verify the specific datasheet revision and manufacturing lot date code upon order confirmation. Confirm that the SOT-227B pinout matches the target PCB footprint requirements. Ensure proper torque specifications are applied during installation to maintain the integrity of the aluminum nitride insulation layer and thermal interface.

Selection Notes

Select this component for applications requiring high current density and fast switching speeds within a standardized footprint. The low package inductance supports high-frequency operation, while the integrated diode simplifies circuit topology. Evaluate thermal management needs based on the specified power dissipation capabilities of the isolated module structure.

Part Context

This part belongs to the IXGN series of HiPerFAST IGBT modules from IXYS. It represents a generation of power semiconductors designed for industrial and consumer electronics markets. The series emphasizes high power density and ease of mounting through standardized mechanical dimensions compatible with existing heatsink infrastructure.

Replacement Considerations

Direct replacements may include IXGN60N60C2D1 or IXGN60N60. Verify pin compatibility and thermal resistance values before substitution. Ensure the alternative device meets the required isolation voltage and switching speed specifications for the specific application environment.

IXGN60N60C2IXGN60N60C2

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