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The IXGN82N120C3H1 is a single IGBT module from the IXYS C3-Class series, utilizing XPT technology. It features a rated collector-emitter voltage of 1200V and a continuous collector current of 130A. The device is housed in a SOT-227B chassis mount package with a maximum power dissipation of 595W. Key electrical parameters include a saturation voltage of 3.2V at 130A and a gate-emitter voltage range of -20V to 20V. The operating temperature range spans from -55°C to +150°C.
Verify the specific suffix and revision level against the manufacturer's latest datasheet to ensure compatibility with your design requirements. Confirm that the SOT-227B mounting interface matches your thermal solution. Check for any recent lifecycle status updates or alternative recommendations directly from IXYS official channels before finalizing procurement.
Select this component for applications requiring high voltage blocking capability and substantial current handling in a compact chassis form factor. Consider the 3.2V saturation voltage for efficiency calculations under full load conditions. Ensure the thermal resistance characteristics of the SOT-227B package align with the system's heat sink capabilities and ambient operating temperatures.
This module belongs to the IXYS C3-Class family, representing an evolution in trench IGBT technology. It is part of a broader portfolio of high-power semiconductor solutions designed for demanding industrial environments. The SOT-227B package is standard for medium-to-high power modules, facilitating direct mounting to cold plates or heatsinks.
Consult IXYS official documentation for verified cross-reference part numbers. Direct replacements must match the 1200V rating, 130A current capacity, and SOT-227B mechanical footprint. Verify pinout compatibility and thermal performance specifications before substitution.