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Product Detailed Parameters
- Description：IGBT 600V 24A TO-220-3
- Series：HiPerFAST™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：24 A
- Current - Collector Pulsed (Icm)：48 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 12A
- Power - Max：100 W
- Switching Energy：500µJ (off)
- Input Type：Standard
- Gate Charge：32 nC
- Td (on/off) @ 25°C：20ns/150ns
- Test Condition：480V, 12A, 18Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The IXGP12N60B is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 24 A at 25°C. The device utilizes silicon technology and is housed in a D2PAK-3 (TO-263-3) surface-mount package. Key electrical parameters include a gate-emitter voltage range of -20 V to +20 V, a saturation voltage of 2.1 V, and an operating temperature range from -55°C to +150°C.
Feature Summary
- Single IGBT configuration for discrete switching applications
- Surface-mount D2PAK-3 package design
- Silicon-based semiconductor construction
Applications
- General purpose power switching circuits
- Motor control systems
- Power supply inverters
Procurement Notes
Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm RoHS compliance status via official documentation before integration. Check for obsolescence notices as availability may be restricted. Ensure storage conditions meet manufacturer specifications to maintain device integrity prior to assembly.
Selection Notes
Select this component for designs requiring a 600V rated single IGBT in a surface-mount format. Evaluate thermal management requirements based on the 2.1V saturation voltage and 24A current rating. Compare against alternative packages if board space constraints differ. Verify gate drive compatibility with the specified voltage limits.
Part Context
This part belongs to the IXYS IGBT transistor portfolio, specifically designed for medium-power switching applications. It represents a standard silicon IGBT solution within the manufacturer's catalog, distinct from higher-performance GenX3 or XPT series devices found in related product lines.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Cross-reference with other IXYS 600V 24A IGBTs in TO-263-3 packages only after verifying pinout and electrical parameter compatibility.
