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Product Detailed Parameters
- Description：IGBT PT 600V 40A TO-220-3
- Series：HiPerFAST™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 12A
- Power - Max：150 W
- Switching Energy：160µJ (on), 90µJ (off)
- Input Type：Standard
- Gate Charge：25 nC
- Td (on/off) @ 25°C：16ns/75ns
- Test Condition：400V, 12A, 22Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The IXGP16N60C2 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a Planar Technology (PT) structure with a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 16 A at 25°C. The device operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 3.0 V at 12 A, a gate charge of 25 nC, and switching energies of 160 µJ (turn-on) and 90 µJ (turn-off). It is housed in a TO-220AB package.
Feature Summary
- Planar technology structure for optimized switching performance
- Standard input type compatible with common drive circuits
- High thermal stability suitable for demanding environments
Applications
- Motor control systems
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify the specific ordering suffix against official IXYS documentation to confirm pinout and packaging details. Confirm availability status as distribution data may vary. Ensure compliance with RoHS directives if required by the application. Cross-reference datasheet revisions to validate parameter consistency before procurement.
Selection Notes
Select this component for applications requiring 600 V blocking capability and moderate current handling up to 16 A. Evaluate thermal management requirements based on the specified power dissipation limits. Compare switching energy values against system efficiency targets. Ensure the drive circuit can supply sufficient gate current to manage the 25 nC gate charge effectively.
Part Context
This IGBT belongs to the IXYS C2 series, which utilizes planar technology for improved ruggedness and switching characteristics compared to older generations. The series is designed for general-purpose power switching applications where reliability and cost-effectiveness are prioritized. It serves as a discrete solution for medium-power conversion tasks.
Replacement Considerations
Direct replacements must match the 600 V rating, 16 A current capacity, and TO-220AB package. Verify that substitute devices have comparable saturation voltage and switching energy specifications to maintain original circuit performance.
