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The IXGP16N60C2D1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a Planar Technology (PT) structure with a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 40 A at 25°C. The device supports a pulse collector current of 100 A and operates within a junction temperature range of -55°C to 150°C. Packaged in a TO-263-3 (D2PAK) surface-mount housing, it exhibits a typical saturated collector-emitter voltage of 3 V at 12 A and 15 V gate drive. Switching characteristics include an on-state energy of 160 µJ and an off-state energy of 90 µJ under specified test conditions.
Verify the specific suffix D1 against official manufacturer documentation to confirm exact electrical tolerances and packaging specifications. Confirm component availability status as distribution data may indicate end-of-life or discontinuation phases. Ensure sourcing channels provide authentic parts with traceable manufacturing records to prevent counterfeit risks.
Select this component when a 600 V rated IGBT with moderate current capacity is required for surface-mount designs. Compare the 40 A continuous current limit and 3 V saturation voltage against circuit requirements. Evaluate the TO-263-3 footprint compatibility with existing PCB layouts and thermal management strategies before finalizing the design choice.
This part belongs to the IXYS IXGP series of planar IGBTs, designed for general-purpose power switching. The numbering convention indicates a 600 V blocking capability and a specific current class. The D1 suffix typically denotes a specific manufacturing lot or minor revision variant within the standard product line.
Direct substitutes require matching 600 V rating, similar 40 A current capacity, and TO-263-3 packaging. Verify that alternative devices offer comparable saturation voltage and switching energy values to maintain original circuit efficiency and thermal performance without redesign.