IXGP20N120BD1

IXGP20N120BD1

  • Description:IGBT 1200V 40A TO-220-3
  • Series:-

SKU:46da7c5a0519 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT 1200V 40A TO-220-3
  • Series:-
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):40 A
  • Current - Collector Pulsed (Icm):100 A
  • Vce(on) (Max) @ Vge, Ic:3.4V @ 15V, 20A
  • Power - Max:190 W
  • Switching Energy:2.1mJ (off)
  • Input Type:Standard
  • Gate Charge:72 nC
  • Td (on/off) @ 25°C:25ns/150ns
  • Test Condition:960V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr):40 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:-
  • Qualification:-

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IXGP20N120BD1

Overview

The IXGP20N120BD1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 1200V and a continuous collector current of 40A. The device utilizes a TO-220-3 through-hole package with a power dissipation rating of 190W. It operates within a temperature range of -55°C to +150°C, offering robust performance for high-voltage switching applications.

Feature Summary

  • High-voltage capability with 1200V blocking
  • Single configuration in TO-220-3 package
  • Through-hole mounting style

Applications

  • Industrial motor drives
  • Power supply inverters
  • High-voltage switching circuits

Procurement Notes

Verify the specific suffix 'D1' against official IXYS documentation to confirm pinout and thermal characteristics differ from standard variants. Ensure compatibility with existing PCB footprints and heatsinking requirements before finalizing procurement decisions.

Selection Notes

Select this component for applications requiring 1200V isolation and moderate current handling up to 40A. Consider the TO-220-3 package constraints for thermal management and ensure gate drive voltages align with standard IGBT specifications.

Part Context

This part belongs to the IXYS IGBT portfolio, designed for medium-power industrial applications. It represents a standard discrete solution for high-voltage switching needs where through-hole reliability is prioritized over surface-mount density.

Replacement Considerations

Cross-reference with IXGP20N120B for potential mechanical or electrical differences. Verify datasheet updates from Littelfuse post-acquisition for any parameter shifts.

IXGP20N120BD1IXGP20N120BD1

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