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The IXGP20N120BD1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 1200V and a continuous collector current of 40A. The device utilizes a TO-220-3 through-hole package with a power dissipation rating of 190W. It operates within a temperature range of -55°C to +150°C, offering robust performance for high-voltage switching applications.
Verify the specific suffix 'D1' against official IXYS documentation to confirm pinout and thermal characteristics differ from standard variants. Ensure compatibility with existing PCB footprints and heatsinking requirements before finalizing procurement decisions.
Select this component for applications requiring 1200V isolation and moderate current handling up to 40A. Consider the TO-220-3 package constraints for thermal management and ensure gate drive voltages align with standard IGBT specifications.
This part belongs to the IXYS IGBT portfolio, designed for medium-power industrial applications. It represents a standard discrete solution for high-voltage switching needs where through-hole reliability is prioritized over surface-mount density.
Cross-reference with IXGP20N120B for potential mechanical or electrical differences. Verify datasheet updates from Littelfuse post-acquisition for any parameter shifts.