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The IXGP24N120C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It belongs to the GenX3™ technology family and features a 1200V collector-emitter breakdown voltage. The device supports a maximum continuous collector current of 48A and handles a power dissipation of 250W. It utilizes a TO-220-3 through-hole package for mounting. Key electrical parameters include a collector-emitter saturation voltage of 4.2V at rated conditions, ensuring efficient switching performance in high-voltage applications.
Verify the specific suffix 'C3' against the manufacturer's latest datasheet to confirm pinout compatibility and thermal characteristics. Ensure that the TO-220-3 package dimensions match the target PCB footprint and heatsinking requirements. Cross-reference the GenX3™ generation specifications to validate switching speed expectations relative to older IGBT generations.
Select this component when a 1200V rating is required for robust overvoltage protection in industrial circuits. The 48A current capacity suits moderate-power inverter legs. Consider the TO-220-3 package for ease of manual assembly or simple board-level cooling solutions where higher power modules are unnecessary.
This part is part of IXYS's discrete IGBT lineup, leveraging GenX3™ technology to balance low conduction losses with fast switching speeds. It serves as a fundamental building block for power electronics, distinct from multi-chip modules or integrated driver packages.
Direct substitutes may include other 1200V, ~50A single IGBTs in TO-220-3 packages from manufacturers like Infineon or Semikron, provided Vce(sat) and switching times are comparable.