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The IXGP2N100A is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS, now part of Littelfuse. It features a collector-emitter breakdown voltage of 1000V and a continuous collector current rating of 4A at 25°C. The device utilizes a TO-220AB three-pin through-hole package with an isolated collector connection. It operates within a junction temperature range of -55°C to +150°C and supports a maximum gate-emitter voltage of ±20V.
Verify the specific suffix 'A' against the manufacturer datasheet to confirm exact saturation voltage characteristics, as variants may differ. Ensure the component source provides valid traceability documentation. Confirm RoHS compliance status matches project requirements. Check for obsolescence notices from Littelfuse prior to finalizing procurement plans.
Select this component when a low-current, high-voltage IGBT is required in a standard through-hole package. The 4A rating limits suitability for high-power applications; verify load currents against derating curves. Consider the TO-220AB package size constraints during PCB layout. Evaluate thermal resistance requirements for the specific mounting environment.
This device belongs to the IXYS IXGP series of general-purpose IGBTs. The series offers a balance of switching speed and conduction losses for medium-power applications. The TO-220AB form factor ensures compatibility with common heatsinking solutions and automated assembly processes used in consumer and industrial electronics manufacturing.
The IXGP2N100 is a closely related variant within the same family. Verify electrical parameters such as VCE(sat) and switching times before substitution. Ensure pinout compatibility remains identical between the base model and the 'A' suffix version.