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Product Detailed Parameters
- Description：IGBT PT 1200V 60A TO-220-3
- Series：GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：3.5V @ 15V, 30A
- Power - Max：300 W
- Switching Energy：3.47mJ (on), 2.16mJ (off)
- Input Type：Standard
- Gate Charge：87 nC
- Td (on/off) @ 25°C：16ns/127ns
- Test Condition：960V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The IXGP30N120B3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the GenX3 series by IXYS. It utilizes silicon technology and features a TO-220-3 through-hole package. The device supports a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 30 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 3.5 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 300 W. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- GenerX3 technology for optimized switching performance
- Soft recovery fast ultrafast diode integrated in anti-parallel configuration
- Designed for high reliability and robust operation
Applications
- Motor drives
- Power supplies
- Inverters
Procurement Notes
Verify the specific suffix and packaging type against official datasheets before ordering. Confirm that the component meets required RoHS compliance standards for your region. Ensure thermal management solutions align with the specified power dissipation limits. Check for any recent engineering change notices affecting pinout or specifications.
Selection Notes
Select this IGBT for applications requiring high voltage blocking capabilities and moderate current handling. The TO-220-3 package suits through-hole mounting on standard PCBs or heatsinks. Consider the saturation voltage and switching characteristics when designing for efficiency. Ensure gate drive voltages remain within the specified ±20 V limits.
Part Context
This component belongs to the IXYS GenX3 family of IGBTs, known for advanced trench gate technology. It is designed for industrial power electronics where efficiency and reliability are critical. The part integrates a fast recovery diode, simplifying circuit design for inductive loads.
Replacement Considerations
Direct substitutes may include other GenX3 series parts with similar voltage and current ratings. Verify pin compatibility and thermal resistance values when cross-referencing. Consult manufacturer documentation for approved alternative part numbers.
