SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXGP70N33TBM-A is a single N-channel Power MOSFET manufactured by IXYS. It utilizes silicon gate technology to achieve high switching speed and low on-resistance. The device is housed in a TO-220F package, designed for robust thermal performance in power electronics applications.
Verify the manufacturer marking and date code against official IXYS documentation to confirm authenticity. Ensure the component matches the specified TO-220F package dimensions and pinout configuration before integration into the design.
Select this component when a single N-channel MOSFET with moderate voltage ratings and high current capacity is required. Consider the thermal characteristics of the TO-220F package and ensure adequate heat sinking for the intended operating conditions.
This part belongs to the IXYS IXGP series of power MOSFETs. The series is characterized by its use of advanced silicon gate technology, offering a balance of switching speed and conduction efficiency for various industrial and commercial power applications.