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Product Detailed Parameters
- Description：IGBT PT 600V 100A TO-3P
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：100 A
- Current - Collector Pulsed (Icm)：230 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 36A
- Power - Max：300 W
- Switching Energy：930µJ (on), 1mJ (off)
- Input Type：Standard
- Gate Charge：110 nC
- Td (on/off) @ 25°C：37ns/330ns
- Test Condition：400V, 36A, 10Ohm, 15V
- Reverse Recovery Time (trr)：25 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The IXGQ50N60B4D1 is a high-voltage N-channel Power MOSFET manufactured by IXYS, designed for demanding power conversion applications. This component features a TO-247AD package and supports a continuous drain current of 50 amperes at case temperature. It operates with a maximum drain-source voltage of 600 volts, ensuring robust performance in industrial settings. The device incorporates fast recovery characteristics suitable for high-frequency switching operations.
Feature Summary
- High voltage capability for reliable operation in demanding electrical environments
- Fast switching characteristics optimized for efficient power conversion
- Robust packaging design supporting high thermal dissipation requirements
Applications
- Industrial motor drives
- Uninterruptible power supplies
- High-frequency DC-DC converters
Procurement Notes
Verify the specific ordering suffix to ensure compatibility with required pin configurations and thermal properties. Confirm that the manufacturer documentation matches the requested part number exactly. Check for any recent updates to the datasheet regarding absolute maximum ratings or recommended operating conditions before finalizing procurement decisions.
Selection Notes
Select this component when high voltage isolation and moderate current handling are required. Ensure the application circuit can support the specified thermal management needs associated with the TO-247AD package. Evaluate switching frequency requirements against the device's dynamic characteristics to optimize efficiency and minimize losses during operation.
Part Context
This MOSFET belongs to IXYS' high-performance power semiconductor lineup, targeting industrial and commercial power electronics markets. It complements other devices in the series offering similar voltage ratings but varying current capacities. The product line emphasizes reliability and thermal stability for long-term deployment in critical infrastructure systems.
Replacement Considerations
Consult official cross-reference guides for direct substitutes. Verify pinout compatibility and thermal resistance values when considering alternative manufacturers. Ensure replacement parts meet or exceed the original 600V rating and 50A current specifications for safe integration.
