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The IXGR120N60C2 is a high-voltage N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It belongs to the Lightspeed 2 series, featuring an electrically isolated back surface for direct heatsink mounting. The device supports a collector-emitter breakdown voltage of 600 V and a continuous collector current of 120 A at 25°C. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a typical saturation voltage of 2.3 V at 120 A, and a gate charge of 480 nC. It operates within a junction temperature range of -55°C to +150°C and utilizes a TO-247AD package.
Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm lot codes and date codes against current manufacturing records. Ensure proper electrostatic discharge handling during storage and installation. Check for any product change notices affecting pinout or thermal characteristics before integration into existing designs.
Select this IGBT for applications requiring high voltage isolation and efficient thermal management. The isolated tab design simplifies assembly by eliminating separate insulation layers. Evaluate thermal resistance values against system heat dissipation requirements. Consider gate drive compatibility with the specified 20 V limit and 480 nC charge requirement for optimal switching performance.
This component is part of the IXYS Lightspeed 2 series, designed for high-performance power electronics. It utilizes advanced HDMOSTM process technology to achieve fast switching and low conduction losses. The series targets industrial and commercial power conversion markets where reliability and compact form factors are critical.
Direct replacements must match the 600V rating, 120A current capacity, and TO-247AD isolated package. Verify that substitute devices offer comparable saturation voltage and switching times. Ensure thermal interface material compatibility with the isolated back surface design.