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The IXGR40N60B2 is a HiPerFAST™ IGBT manufactured by IXYS, designed for high-efficiency power switching applications. It features a collector-emitter breakdown voltage of 600V and a continuous collector current rating of 60A at 25°C. The device exhibits a maximum saturation voltage of 1.9V at 30A and 15V gate drive. With a pulsed collector current capability of 180A and a maximum power dissipation of 167W, it supports robust operation in demanding environments. The component operates within a junction temperature range of -55°C to 150°C and utilizes the ISOPLUS247™ through-hole package.
Verify part authenticity against official IXYS documentation due to obsolete status. Confirm package integrity and pin alignment prior to installation. Ensure sourcing channels provide traceable manufacturing records. Cross-reference datasheet revisions to match specific production batches. Validate thermal interface compatibility with heatsink designs.
Select this component for applications requiring 600V blocking capability and moderate current handling up to 60A. Consider the 1.9V saturation voltage for conduction loss calculations. Evaluate the ISOPLUS247™ package for mounting constraints and thermal management requirements. Compare switching energy parameters against system frequency needs.
This device belongs to the IXYS HiPerFAST™ series, known for advanced IGBT technology. It serves as a discrete power switch alternative to modules in medium-power applications. The series emphasizes reliability and efficiency in industrial power electronics.
Direct substitutes include IXST40N60B and AOK30B60D1. Verify electrical parameter compatibility and package dimensions before substitution.
The maximum collector-emitter breakdown voltage is 600V.
Yes, it features a soft-recovery fast diode integrated with the IGBT chip.