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The IXYS IXGR40N60C is a HiPerFAST™ IGBT featuring a Punch-Through (PT) structure and ISOPLUS247™ package. It supports a maximum collector-emitter breakdown voltage of 600V with a continuous collector current of 56A and a pulsed current of 200A. The device exhibits a maximum Vce(on) of 2.7V at 15V gate drive and 30A collector current, alongside a gate charge of 95nC. Switching characteristics include turn-on and turn-off delays of 18ns and 90ns respectively under 400V, 30A test conditions. Thermal management allows for a maximum power dissipation of 170W, with an operating junction temperature range spanning from -55°C to 150°C.
Verify component authenticity through authorized distributors or direct manufacturer channels due to obsolete status. Confirm lot codes and datasheet revisions match specific production batches. Request detailed shipping documentation to ensure compliance with handling requirements for sensitive semiconductor devices during transit.
Evaluate thermal resistance parameters against system heat sink capabilities to maintain junction temperatures within safe limits. Compare gate charge values with available driver output strength to ensure adequate switching speed. Verify voltage and current ratings exceed peak circuit demands to prevent device failure during transient events.
This component belongs to the IXYS HiPerFAST™ series, designed for high-efficiency power switching applications. The ISOPLUS247™ packaging variant offers enhanced thermal dissipation compared to standard TO-247 packages. It serves as a specialized discrete semiconductor solution for industrial power electronics requiring high voltage blocking and moderate current handling.
Direct substitutes include IXGH40N60C and IXSH30N60C. Verify pinout compatibility and thermal interface dimensions before integration. Review datasheet specifications for differences in saturation voltage and switching energy to ensure circuit performance remains within acceptable tolerances.