IXGR50N90B2D1

Overview

The IXGR50N90B2D1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS, belonging to the HiPerFAST B2 series. It utilizes Si technology and is housed in a TO-247AD-3 through-hole package. The device features a maximum collector-emitter voltage (VCEO) of 900 V and a continuous collector current (Ic) of 50 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.7 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 400 W. It operates within a temperature range of -55°C to +150°C.

Feature Summary

• High-voltage capability with 900 V breakdown rating suitable for demanding power switching applications.
• Optimized low saturation voltage characteristics to minimize conduction losses during operation.
• Robust thermal management design supporting high power dissipation in standard through-hole mounting configurations.

Applications

• Industrial motor drives and variable frequency drives
• High-frequency power supplies and inverters
• Uninterruptible power supply (UPS) systems

Procurement Notes

Verify component authenticity against official IXYS documentation prior to integration. Confirm that the specific ordering suffix matches the required electrical tolerances and packaging format. Ensure storage conditions adhere to moisture sensitivity levels defined in the manufacturer's datasheet to prevent package degradation before soldering.

Selection Notes

Select this component when a 900 V blocking voltage is required alongside moderate current handling capabilities. The TO-247AD-3 package facilitates efficient heat transfer to external heatsinks. Compare the 2.7 V saturation voltage against alternative devices to ensure optimal efficiency for the specific load current and switching frequency requirements of the target circuit design.

Part Context

This part belongs to the IXYS HiPerFAST B2 family of IGBTs, designed for high-efficiency power conversion. It complements other high-voltage discrete semiconductors like the IXGH50N90B2D1, offering standardized pinouts and thermal characteristics for easy replacement or parallel operation in industrial power electronics designs requiring reliable high-voltage switching.

Replacement Considerations

Direct substitutes may include the IXGH50N90B2D1 from the same manufacturer family, provided pin compatibility and thermal resistance values are verified. Cross-brand replacements require careful comparison of Vceo, Ic, and Vce(sat) parameters to ensure circuit performance remains within safe operating limits without redesigning the gate drive or thermal management infrastructure.