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Product Detailed Parameters
- Description：IGBT 600V 75A ISOPLUS247
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 60A
- Power - Max：300 W
- Switching Energy：16mJ (off)
- Input Type：Standard
- Gate Charge：200 nC
- Td (on/off) @ 25°C：50ns/600ns
- Test Condition：480V, 60A, 2.7Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：ISOPLUS247™
- Grade：-
- Qualification：-
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Overview
The IXGR60N60U1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 75 A at 25°C. The device utilizes silicon technology and is housed in an ISOPLUS247-3 surface-mount package. It operates within a temperature range of -55°C to +150°C, with a maximum gate-emitter voltage of ±20 V.
Feature Summary
- Single configuration for discrete switching applications
- Surface-mount installation via ISOPLUS247-3 package
- Silicon-based semiconductor construction
Applications
- Industrial motor drives
- Switch-mode power supplies
- Inverter circuits
Procurement Notes
Verify component authenticity through authorized IXYS distributors or certified secondary market suppliers. Confirm the specific manufacturing date code and lot traceability against original datasheet specifications. Ensure storage conditions comply with moisture sensitivity levels prior to soldering. Request detailed test reports if the component is sourced from non-original channels to validate electrical performance parameters.
Selection Notes
Select this component for designs requiring high current handling in a compact surface-mount form factor. Evaluate thermal management requirements carefully due to the 75 A current rating and package constraints. Compare total system cost against through-hole alternatives if PCB space allows. Verify that the driving circuit can support the required gate charge and switching speeds for the intended application frequency.
Part Context
This IGBT belongs to the IXGR60N60 series, which includes various variants with different saturation voltages and packaging options. The U1 suffix typically denotes specific internal die or packaging configurations within the IXYS portfolio. It serves as a high-power switching element designed for efficiency in medium-to-high power conversion systems.
Replacement Considerations
Direct substitutes include other IXYS 600V 75A IGBTs in similar packages, such as the IXGR60N60C1 or IXGH60N60B2D1, provided pinouts and electrical characteristics match. Cross-reference with competitors like Infineon or Mitsubishi offering equivalent 600V/75A SMD IGBTs.
