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Product Detailed Parameters
- Description：IGBT NPT 1600V 75A TO-268AA
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1600 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：4.7V @ 20V, 100A
- Power - Max：300 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：84 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268AA
- Grade：-
- Qualification：-
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Overview
The IXGT25N160 is a single NPT IGBT transistor manufactured by IXYS, housed in a TO-268AA (D3PAK) surface-mount package. It features a collector-emitter breakdown voltage of 1600 V and a continuous collector current rating of 75 A. The device supports a pulsed collector current of 200 A and has a maximum power dissipation of 300 W. Key electrical parameters include a gate charge of 84 nC, a gate-emitter voltage range of ±20 V, and a saturation voltage of 4.7 V at 20 V gate drive and 100 A collector current.
Feature Summary
- Utilizes Non-Punch Through (NPT) technology for robust high-voltage performance
- Designed for surface-mount assembly using the TO-268AA package
- Supports high surge currents up to 200 A for demanding industrial loads
Applications
- Industrial motor drives and control systems
- High-power switching applications requiring 1600V isolation
- Inverter circuits in renewable energy systems
Procurement Notes
Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm that the received part matches the IXGT25N160 marking and package type. Check datasheet revisions for any updates to thermal or electrical limits before integration into production designs.
Selection Notes
Select this component for designs requiring 1600V blocking capability with moderate current handling. Ensure the PCB layout accommodates the TO-268AA footprint and provides adequate thermal relief for the 300W dissipation rating. Consider the 84 nC gate charge when designing the driver circuitry for optimal switching speeds.
Part Context
This device belongs to the IXYS IGBT transistor family, specifically utilizing NPT technology. It is distinct from trench-gate variants and is characterized by its specific voltage and current ratings within the company's discrete semiconductor portfolio.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with direct replacements only if explicitly listed in official cross-reference guides.
