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Product Detailed Parameters
- Description：IGBT 2500V 5.5A TO-268AA
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：2500 V
- Current - Collector (Ic) (Max)：5.5 A
- Current - Collector Pulsed (Icm)：13.5 A
- Vce(on) (Max) @ Vge, Ic：3.1V @ 15V, 2A
- Power - Max：32 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：10.5 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268AA
- Grade：-
- Qualification：-
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Overview
The IXGT2N250 is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 2.5 kV and is housed in a D3PAK-3 (TO-268-3) surface-mount package. The device supports a continuous collector current of 13.5 A at 25°C, with a typical saturation voltage of 3.1 V. Power dissipation reaches 32 W, while the gate-emitter voltage limits are set at ±20 V. The component operates within a temperature range of -55°C to +150°C.
Feature Summary
- High-voltage capability rated for 2.5 kV collector-emitter breakdown
- Surface-mount construction utilizing the D3PAK-3 (TO-268-3) package
- Single configuration designed for standard switching applications
Applications
- High-voltage power supply circuits
- Industrial motor drive systems
- Inverter topologies requiring moderate current handling
Procurement Notes
Verify the specific manufacturer part number against official IXYS documentation to confirm the D3PAK-3 package style and electrical ratings. Ensure that the intended application environment remains within the specified operating temperature range of -55°C to +150°C. Confirm compliance with relevant RoHS and REACH standards prior to integration into final assemblies.
Selection Notes
Select this component when a high-voltage IGBT with a surface-mount footprint is required. The 2.5 kV rating suits applications demanding significant isolation. Evaluate thermal management requirements based on the 32 W power dissipation limit. Compare the 13.5 A continuous current capacity against peak load demands to ensure adequate performance margins during operation.
Part Context
This device belongs to the IXYS high-voltage IGBT portfolio, specifically engineered for robust power switching. The TO-268-3 package facilitates automated surface-mount assembly processes. It serves as a discrete solution for medium-power conversion tasks where high blocking voltage is critical.
Replacement Considerations
Cross-reference alternative single-chip IGBTs offering a 2.5 kV rating and compatible TO-268-3 packaging. Verify that substitute devices match or exceed the 13.5 A continuous current and 32 W dissipation specifications.
