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Product Detailed Parameters
- Description：IGBT PT 1200V TO-268AA
- Series：GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：3.5V @ 15V, 30A
- Power - Max：300 W
- Switching Energy：3.47mJ (on), 2.16mJ (off)
- Input Type：Standard
- Gate Charge：87 nC
- Td (on/off) @ 25°C：16ns/127ns
- Test Condition：960V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr)：100 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268AA
- Grade：-
- Qualification：-
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Overview
The IXGT30N120B3D1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes silicon technology and is housed in a D3PAK-3 (TO-268-3) surface-mount package. The device supports a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 30 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 3.5 V, a power dissipation rating of 300 W, and a gate-emitter voltage range of -20 V to +20 V. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Single configuration IGBT designed for surface-mount applications
- High voltage capability with 1.2 kV collector-emitter breakdown
- Robust thermal performance supporting up to 300 W power dissipation
Applications
- Industrial motor drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify the specific ordering suffix and manufacturer documentation to confirm exact electrical characteristics and mechanical dimensions before integration. Ensure that the procurement channel provides authentic components from authorized sources to guarantee reliability and compliance with specified technical standards.
Selection Notes
Select this component for designs requiring a 1.2 kV rated single IGBT in a TO-268-3 package. Consider the 3.5 V saturation voltage and 30 A continuous current limits when designing the thermal management system. Verify compatibility with standard gate drive voltages within the +/- 20 V specification.
Part Context
This part belongs to the IXGT30N120 series of high-voltage IGBTs from IXYS. It shares the core electrical ratings of the series but is distinguished by its specific D3PAK-3 surface-mount packaging, differentiating it from through-hole variants like the IXGH series.
Replacement Considerations
Direct substitutes must match the 1.2 kV voltage rating, 30 A current capacity, and TO-268-3 package. Cross-reference datasheets for saturation voltage and switching characteristics to ensure circuit compatibility.
