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The IXGT32N170A is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 32 A at 25°C. The device operates within a temperature range of -55°C to +150°C junction temperature. It utilizes a D3PAK-3 (TO-268-3) surface-mount package with a maximum collector-emitter saturation voltage of 4 V. The component supports a gate-emitter voltage range of -20 V to +20 V.
Verify the specific manufacturer datasheet for updated RoHS and REACH compliance status before procurement. Confirm the exact package variant matches the required PCB footprint, as TO-268 packages may have slight dimensional variations between suppliers. Ensure ordering suffixes align with the intended packaging format.
Select this component when a 1.7 kV rating and 32 A continuous current are required in a surface-mount configuration. Compare the 4 V saturation voltage against system efficiency targets. Ensure the thermal management solution can handle the power dissipation limits specified in the official datasheet for the chosen ambient conditions.
This part belongs to the IXGT series of IGBTs from IXYS, designed for medium-power switching applications. It shares the same voltage class and package type as other members like the IXGT16N170A but offers higher current capacity. The series is characterized by standard NPT technology suitable for general industrial use.
Direct substitutes include other IXYS parts in the same voltage and current class such as the IXGT32N170 if pin compatibility is confirmed. Cross-compatibility with other manufacturers requires verification of pinout, saturation voltage, and thermal resistance parameters.