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The IXGT6N170-TRL is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes the BIMOSFET technology and is housed in a D3PAK-3 (TO-268-3) surface-mount package. The device supports a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 6 A at 25°C, with a peak pulsed current rating of 14 A. Key electrical parameters include a collector-emitter saturation voltage of 7 V and a power dissipation capacity of 75 W. The component operates within a junction temperature range of -55°C to +150°C and features a maximum gate-emitter voltage of ±20 V.
Verify the specific suffix against official manufacturer documentation to confirm the reel packaging format. Ensure the ordering quantity aligns with the standard factory reel size to avoid cut-tape handling variations. Cross-reference the datasheet revision date to confirm compatibility with current design specifications.
Select this component when a surface-mount solution is required for 1.7 kV applications. Compare the 7 V saturation voltage against lower-voltage alternatives if conduction losses are critical. Verify that the TO-268-3 footprint matches the PCB layout constraints and that the 75 W power dissipation rating meets the thermal management requirements of the target enclosure.
This part belongs to the IXYS IXGT series of single IGBTs. It shares the same die and electrical characteristics as the tube-packaged IXGT6N170, differing only in the trailing 'TRL' suffix which denotes tape-and-reel packaging for automated manufacturing. It serves as a direct packaging alternative to the standard tube version for high-volume production lines.
The IXGT6N170 is the identical functional equivalent packaged in tubes. When substituting, ensure the PCB reflow profile accommodates the thermal mass differences between reel and tube components. No other cross-compatible part numbers are officially documented for this specific model.