ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 1700V 6A TO-268HV
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：6:00 AM
- Current - Collector Pulsed (Icm)：14 A
- Vce(on) (Max) @ Vge, Ic：7V @ 15V, 3A
- Power - Max：75 W
- Switching Energy：590µJ (on), 180µJ (off)
- Input Type：Standard
- Gate Charge：18.5 nC
- Td (on/off) @ 25°C：46ns/220ns
- Test Condition：850V, 6A, 33Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268HV (IXGT)
- Grade：-
- Qualification：-
Download product information
Overview
The IXGT6N170AHV is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage (VCEO) of 1700 V and a continuous collector current (Ic) of 6 A at 25°C. The device exhibits a typical collector-emitter saturation voltage (VCE(sat)) of 4 V. It is housed in a D3PAK-3 (TO-268-3) surface-mount package with a maximum power dissipation (Pd) of 75 W. The component operates within a junction temperature range of -55°C to +150°C and supports a maximum gate-emitter voltage of ±20 V.
Feature Summary
- High-voltage capability rated for 1700 V collector-emitter breakdown
- Surface-mount D3PAK-3 packaging for automated assembly integration
- Robust thermal performance supporting up to 150°C junction temperatures
Applications
- Industrial motor drives and inverters
- Uninterruptible power supplies (UPS)
- High-frequency switching power converters
Procurement Notes
Verify the specific suffix designation against official manufacturer documentation, as variations may indicate distinct testing or binning criteria. Confirm RoHS compliance status through the latest datasheet revision. Ensure ordering quantities align with standard tube packaging configurations provided by authorized distributors to maintain supply chain consistency.
Selection Notes
Select this component for applications requiring high blocking voltage in a compact surface-mount form factor. Evaluate thermal management requirements carefully, as the TO-268-3 package dissipates 75 W under ideal conditions. Compare saturation voltage characteristics against alternative IGBTs to ensure compatibility with existing gate drive circuits and efficiency targets.
Part Context
This part belongs to the IXYS High Voltage IGBT portfolio, designed for robust performance in demanding power electronics environments. The series typically includes variants with different current ratings and package options, such as through-hole TO-247 models, allowing designers to scale power density while maintaining consistent electrical characteristics across the product line.
Replacement Considerations
Direct substitutes include other 1700 V IGBTs in the TO-268-3 package from manufacturers like Infineon or Mitsubishi. Verify pinout compatibility and thermal resistance values before substitution. Cross-referencing with IXYS internal equivalents, such as the IXGT6N170, may be necessary if specific HV variant specifications are required.
