IXGX35N120BD1

Overview

The IXGX35N120BD1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a TO-247-PLUS-3 package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 70 A at 25°C. The saturation voltage is specified at 3.3 V, with a gate-emitter voltage range of -20 V to +20 V. Operating temperatures span from -55°C to +150°C. This component belongs to the IXGX35N120 series.

Feature Summary

• Single IGBT configuration in a robust TO-247-PLUS-3 package
• High voltage capability rated at 1200 V collector-emitter breakdown
• Designed for high-current applications with 70 A continuous rating
• Wide operating temperature range suitable for demanding environments

Applications

• Industrial motor drives and control systems
• High-frequency power supplies and inverters
• Welding equipment power stages
• Uninterruptible Power Supply (UPS) units

Procurement Notes

Verify the specific suffix 'D1' against official IXYS documentation, as standard listings often reference the base model without this suffix. Confirm RoHS compliance status directly with the manufacturer or authorized distributors. Check for active production status, as related models may carry end-of-life notices. Ensure sourcing channels provide valid traceability for industrial-grade components.

Selection Notes

Select this component when a 1200 V, 70 A single IGBT in a TO-247-PLUS-3 package is required. Compare the 3.3 V saturation voltage against system thermal constraints. Verify that the driving circuit can supply the necessary gate charge within the -20 V to +20 V limits. Consider the thermal resistance characteristics for heatsink design relative to the expected duty cycle.

Part Context

This part belongs to the IXYS IXGX series of high-voltage IGBTs. It shares core electrical specifications with the IXGX35N120B but may differ in packaging or internal diode integration depending on the 'D1' designation. The series is generally targeted at medium-to-high power switching applications requiring reliable performance under high voltage stress.

Replacement Considerations

Publicly confirmed direct substitute part numbers for the specific 'IXGX35N120BD1' variant are not available in verified sources. Engineers should evaluate generic equivalents like the IXGX35N120B or IXGT35N120B only after verifying pinout compatibility and exact parameter matching via official datasheets.