IXHX40N150V1HV

IXHX40N150V1HV

$50.89
  • Description:SCR 1.5KV TO247PLUS-HV
  • Series:-

SKU:1b3bcde0cf90 Category: Brand:

  
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Product Detailed Parameters

  • Description:SCR 1.5KV TO247PLUS-HV
  • Series:-
  • Mfr:IXYS
  • Package:Tube
  • Voltage - Off State:1.5 kV
  • Voltage - Gate Trigger (Vgt) (Max):-
  • Current - Gate Trigger (Igt) (Max):-
  • Current - Hold (Ih) (Max):-
  • Current - Non Rep. Surge 50, 60Hz (Itsm):-
  • SCR Type:Standard Recovery
  • Operating Temperature:-55°C ~ 150°C
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3 Variant
  • Supplier Device Package:TO-247PLUS-HV
  • Voltage - On State (Vtm) (Max):-
  • Current - On State (It (AV)) (Max):-
  • Current - On State (It (RMS)) (Max):-
  • Current - Off State (Max):-

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IXHX40N150V1HV

Overview

The IXHX40N150V1HV is a 1500V MOS Gated Thyristor manufactured by IXYS. This component integrates an anti-parallel diode within its structure, combining the advantages of both MOSFET and IGBT technologies. It is designed for high-voltage applications requiring robust switching capabilities. The device features a specific gate control mechanism typical of MOS-controlled thyristors, allowing for efficient operation in power conversion systems.

Feature Summary

  • Integrates an anti-parallel diode for simplified circuit design
  • MOS-gated thyristor technology for controlled switching
  • High voltage rating suitable for demanding power applications

Applications

  • High voltage DC-DC converters
  • Induction heating systems
  • Uninterruptible power supplies (UPS)

Part Context

This component belongs to the family of MOS Gated Thyristors produced by IXYS Corporation. It shares functional similarities with other high-voltage devices like the IXHH40N150HV, which also features a 1500V rating and MOS gating. These devices are distinct from standard IGBTs or MOSFETs due to their hybrid conduction characteristics.

IXHX40N150V1HVIXHX40N150V1HV
$50.89
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