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IXKR40N60C is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 600V 38A ISOPLUS247. Review the specifications below when checking this part for your BOM.
The IXYS IXKR40N60C is a second-generation CoolMOS power MOSFET housed in an ISOPLUS247 package. It features an N-channel enhancement mode design with low on-resistance and high blocking capability. The device utilizes a DCB base for electrical isolation from the heatsink, reducing coupling capacitance and EMI. Key specifications include avalanche rating for unclamped inductive switching (UIS) and low thermal resistance achieved through reduced chip thickness.
Verify component authenticity against official IXYS documentation before integration. Confirm that the ISOPLUS247 package dimensions match the target PCB footprint. Ensure thermal interface materials are compatible with the electrically isolated DCB base. Check for RoHS compliance status as indicated in current datasheets. Validate availability of direct substitutes if supply chain constraints arise.
Select this component for applications requiring high power density and efficient thermal management. The ISOPLUS247 package offers JEDEC TO-247AD compatibility while providing enhanced isolation properties. Consider the avalanche rating when designing circuits subject to inductive loads. Evaluate the low coupling capacitance benefits for high-frequency switching environments to minimize electromagnetic interference.
This part belongs to the CoolMOS series by IXYS, representing second-generation silicon MOSFET technology. It is designed to replace standard MOSFETs in high-performance power conversion applications. The ISOPLUS247 package distinguishes it from traditional leaded packages by offering superior thermal performance and electrical isolation capabilities for modern power electronics designs.
IXKR40N60C
Yes, the device is avalanche rated for unclamped inductive switching (UIS).
It provides electrical isolation towards the heatsink via a DCB base, resulting in low coupling capacitance and reduced EMI.
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