IXLF19N250A

Overview

The IXLF19N250A is a high-voltage Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes the ISOPLUS i4-PAC™ package, which provides an isolated back surface and enlarged creepage distances for enhanced reliability in high-voltage environments. The device features a collector-emitter breakdown voltage of 2500 V and a continuous collector current of 32 A at 25°C case temperature. Key electrical parameters include a maximum saturation voltage of 3.2 V and a typical fall time of 250 ns. Designed as a silicon-based component, it operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• ISOPLUS i4-PAC™ high voltage package with isolated back surface
• Enlarged creepage distance towards heatsink and between pins
• Application friendly pinout configuration
• High reliability construction

Applications

• Switched mode power supplies
• DC-DC converters
• Resonant converters
• Laser generators and X-ray generators
• Discharge circuits

Procurement Notes

Verify the specific manufacturing lot and date code upon receipt to ensure compliance with project timelines. Confirm that the received components match the IXLF19N250A designation exactly. Check for physical integrity of the ISOPLUS i4-PAC™ package leads and isolation surfaces. Ensure storage conditions remain within specified limits to prevent moisture absorption prior to soldering. Review the latest datasheet revision for any updates on recommended soldering profiles or handling precautions.

Selection Notes

Select this component when replacing high-voltage MOSFETs requiring lower voltage drop while maintaining comparable switching speeds. Consider its suitability for applications needing voltage-controlled turn-on and turn-off capabilities as an alternative to thyristors. Evaluate the thermal management requirements given the 3.2 V saturation voltage and 32 A current rating. Ensure the PCB layout accommodates the specific pinout and creepage distances defined by the ISOPLUS i4-PAC™ package outline.

Part Context

The IXLF19N250A belongs to IXYS's portfolio of high-voltage IGBTs designed for demanding power electronics applications. It is part of the series utilizing the specialized ISOPLUS i4-PAC™ packaging technology. This package distinguishes itself through enhanced isolation features compared to standard TO-247 or similar discrete packages. The component targets markets requiring robust performance in high-voltage switching scenarios such as industrial power conversion and medical imaging equipment.

Replacement Considerations

Official documentation identifies the IXLF19N250A as a substitute for high-voltage MOSFETs and thyristors in specific circuit topologies. When replacing existing components, verify that the new IGBT's voltage and current ratings exceed the original design margins. Ensure the gate drive circuitry is compatible with IGBT characteristics rather than pure MOSFET inputs if swapping from MOSFETs. Confirm mechanical fitment within the ISOPLUS i4-PAC™ footprint.