ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT NPT 1200V 25A TO-220-3
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：25 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.95V @ 15V, 10A
- Power - Max：300 W
- Switching Energy：1.1mJ (on), 130µJ (off)
- Input Type：Standard
- Gate Charge：36 nC
- Td (on/off) @ 25°C：-
- Test Condition：600V, 10A, 47Ohm, 15V
- Reverse Recovery Time (trr)：300 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
Download product information
Overview
The IXRP15N120 is a high-voltage IGBT with reverse blocking capability, featuring an NPT structure. It supports a collector-emitter voltage of ±1200 V and a continuous collector current of 25 A at 25°C. The device exhibits a typical saturation voltage of 2.5 V at 10 A. It integrates a monolithic series diode for soft reverse recovery, eliminating the need for external components. Packaged in TO-220AB, it operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Reverse blocking capability via monolithically integrated series diode
- Soft reverse recovery characteristics
- Positive temperature coefficient of saturation voltage
Applications
- Current source inverters
- Matrix converters
- Bi-directional switches
- Resonant converters
- Induction heating
Procurement Notes
Verify the specific datasheet revision against the manufacturer's official records before implementation. Confirm that the TO-220AB package dimensions and mounting torque specifications align with the target thermal management design. Ensure the gate drive voltage limits are respected to maintain device integrity during operation.
Selection Notes
Select this component when bidirectional current handling and high voltage blocking are required in a single package. The integrated diode simplifies circuit topology by removing external series diodes. Consider the positive temperature coefficient for reliable parallel operation and thermal stability under varying load conditions.
Part Context
This IGBT belongs to the IXRP series designed for high-power applications requiring robust reverse blocking. It utilizes non-punch-through technology to ensure stable performance. The device is suitable for demanding industrial environments where reliability and compact design are critical for power conversion systems.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
Does the IXRP15N120 require an external diode?
No, it features a monolithically integrated series diode, so no external series diode is required.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCES) is ±1200 V across the operating temperature range.
How does the saturation voltage behave with temperature?
The saturation voltage has a positive temperature coefficient, which aids in thermal stability.
