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The IXSH24N60U1 is a HiPerFAST IGBT with an integrated anti-parallel Fast Recovery Epitaxial Diode (FRED). It utilizes the second-generation HDMOS process to achieve low VCE(sat) for minimal conduction losses. The device features a standard JEDEC TO-247 AD package, suitable for surface mounting and easy screw mounting. Key electrical parameters include a collector-emitter breakdown voltage of 600V, a continuous collector current of 48A, and a maximum power dissipation of 150W. The gate charge is specified at 41 nC, with turn-on and turn-off times of 50ns and 150ns respectively at 25°C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific manufacturing date codes relevant to your supply chain requirements. Ensure proper handling procedures are followed during storage and assembly to maintain device integrity.
Select this component for applications requiring combined switching and freewheeling functions in a compact form factor. Consider the thermal management capabilities provided by the TO-247 AD package. Evaluate the trade-off between conduction losses and switching speeds based on the specific operating frequency and load conditions of the target design.
This part belongs to the IXYS HiPerFAST series, which combines IGBT and diode technologies. The series is designed for high-efficiency power conversion applications. The TO-247 AD package provides robust mechanical stability and efficient heat dissipation, making it suitable for industrial and consumer electronics power stages.
Direct substitutes may include parts from the same family with updated suffixes. Cross-referencing with other manufacturers' 600V 48A IGBTs with integrated diodes is possible but requires careful verification of pinout compatibility and electrical parameter margins.