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The IXSH30N60CD1 is a single Insulated Gate Bipolar Transistor (IGBT) with an integrated anti-parallel diode, manufactured by IXYS. It utilizes Si technology and features a TO-247AD-3 flange mount package for through-hole installation. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 30 A. It operates within a temperature range of -55 °C to +150 °C and includes short circuit safe operating area (SCSOA) capability.
Verify the specific suffix CD1 against official IXYS documentation to confirm pinout and electrical characteristics. Confirm availability status as distribution channels may vary. Ensure the procurement source provides valid RoHS compliance data. Cross-reference the manufacturer part number with the latest datasheet revision to avoid obsolete stock.
Select this component for applications requiring high reliability under fault conditions due to its SCSOA rating. The integrated diode simplifies circuit design for inductive loads. Verify that the thermal resistance of the mounting solution matches the device's dissipation requirements. Ensure gate drive voltages remain within the specified limits for reliable switching performance.
This IGBT belongs to the IXYS SH series, designed for general-purpose power switching. The series emphasizes robustness and ease of integration into high-power circuits. The TO-247AD package is standard for medium-power discrete semiconductors, facilitating heat sink attachment. It serves as a core switching element in various industrial power conversion topologies.
Publicly confirmed substitute part numbers are not available in the provided reference material. Evaluate alternatives based on matching voltage, current, and package specifications only after verifying technical compatibility.