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The IXSH45N120B is a silicon IGBT from IXYS, housed in a TO-247 package. It features a maximum collector-emitter voltage of 1200V and a continuous collector current of 75A at 25°C. The device supports a pulsed collector current of 180A and dissipates up to 300W of power. Operating temperatures range from -55°C to +150°C.
Verify the component status carefully as sources indicate it may be discontinued. Confirm the specific datasheet version and electrical parameters against official IXYS documentation before integration. Ensure the TO-247 pinout matches your PCB layout requirements.
Select this part for applications requiring high voltage blocking and moderate current handling within a standard through-hole footprint. Consider thermal management solutions given the 300W power dissipation limit. Evaluate alternative models if current demands exceed 75A or if lower saturation voltage is critical.
This component belongs to IXYS's portfolio of discrete power semiconductors. It serves as a switching element in medium-power electronic converters. The TO-247 form factor provides reliable thermal coupling for heatsink mounting in industrial environments.
Public confirmed substitute part numbers are not available in the provided data. Consult manufacturer catalogs for direct replacements or cross-reference based on identical Vceo, Ic, and package specifications.
The maximum pulsed collector current is 180A.
Yes, it is designed with a robust short-circuit safe operating area (SCSOA).