ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 600V 55A TO-264AA
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：55 A
- Current - Collector Pulsed (Icm)：110 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 55A
- Power - Max：200 W
- Switching Energy：1.5mJ (off)
- Input Type：Standard
- Gate Charge：100 nC
- Td (on/off) @ 25°C：30ns/150ns
- Test Condition：480V, 30A, 4.7Ohm, 15V
- Reverse Recovery Time (trr)：50 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-264-3, TO-264AA
- Supplier Device Package：TO-264AA (IXSK)
- Grade：-
- Qualification：-
Download product information
Overview
The IXSK30N60BD1 is a high-speed Insulated Gate Bipolar Transistor (IGBT) with an integrated anti-parallel diode, manufactured by IXYS. It belongs to the 5th generation Trench IGBT family, featuring square Reverse Bias Safe Operating Areas (RBSOA). The device offers a rated voltage of 650V and supports current ratings ranging from 35A to 220A within its series, with specific configuration for high-speed switching applications.
Feature Summary
- High-speed switching performance utilizing 5th generation Trench IGBT technology
- Square Reverse Bias Safe Operating Area (RBSOA) for robust operation
- Integrated anti-parallel diode for single-device bridge configurations
- Low gate charge characteristics for efficient drive requirements
Applications
- High-frequency power conversion circuits
- Motor drive inverters requiring fast switching
- Industrial power supplies
- Uninterruptible Power Supply (UPS) systems
Procurement Notes
Verify the specific current rating variant required, as the series spans 35A to 220A. Confirm package compatibility and thermal management needs against the datasheet specifications. Ensure the selected part matches the exact suffix for the desired electrical parameters. Cross-reference with official IXYS documentation for any recent product change notices or obsolescence updates before finalizing procurement.
Selection Notes
Select this component for applications demanding high switching speeds and reliable reverse bias performance. The square RBSOA provides enhanced safety margins compared to traditional designs. Consider the low gate charge for reduced driver power consumption. Evaluate thermal dissipation capabilities based on the specific current load and ambient operating conditions defined in the technical data.
Part Context
This component is part of IXYS's 5th generation Trench IGBT portfolio, designed to replace older technologies in high-performance power electronics. It integrates advanced trench gate technology with optimized field plate structures to achieve superior switching characteristics and ruggedness in medium to high-power industrial applications.
Replacement Considerations
Direct substitutes may include other 5th generation Trench IGBTs from IXYS with matching 650V ratings and similar current capacities. Verify pinout compatibility and thermal resistance values when considering alternative manufacturers' offerings to ensure seamless integration without circuit redesign.
