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The IXSN35N100U1 is a high-voltage IGBT transistor module manufactured by IXYS. It features a continuous collector current of 38 A and a drain-source breakdown voltage of 1 kV. The device utilizes silicon technology and is housed in an SOT-227B package with screw mount installation. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a minimum operating temperature of -40°C, and a maximum operating temperature of +150°C. The module supports a power dissipation capacity suitable for industrial applications.
Verify the specific revision level and manufacturing date code upon order confirmation, as component specifications may evolve. Ensure that the supplier provides original manufacturer documentation to confirm authenticity. Check for any end-of-life notices or recommended non-new-design status updates from IXYS before finalizing procurement plans.
Select this module when high voltage blocking capability and robust short-circuit tolerance are required. The ISOTOP-compatible form factor facilitates integration into existing thermal management designs. Consider the ±20 V gate drive requirements and the thermal resistance characteristics associated with the SOT-227B package for proper heat sinking.
This component belongs to the IXSN35N100 series of IGBT modules from IXYS. It is designed for medium-power switching applications requiring high reliability. The series typically includes variants optimized for different current ratings while maintaining consistent voltage handling and package compatibility within the miniBLOC family.
Public confirmed substitute part numbers are not available in the provided source data. Consult official IXYS cross-reference guides for potential alternatives.